centellax ? web: http://www .centellax.com/ email: sales@centellax.com tel: 866.522.6888 fax: 707.568.7647 centellax UATM30M2C datasheet specifications subject to change without notice. copyright ? 2001-2004 centellax, inc. printed in usa. 10 aug 2004. key specifications vdd=5.0v, idd=150ma, zo=50 ? specifications pertain to wafer measurements with rf probes and dc bias cards @ 25c 6 - 20ghz 1.5 - 20ghz 0.04 - 30ghz parameter description min typ max min typ max min typ max s21 (db) small signal gain 16.5 18 16.5 18 14.5 16 flatness (db) gain flatness 0.3 0.6 0.6 1.0 1.5 2.0 s11 (db) input match -16 -13 -16 -13 -10 -8 s22 (db) output match -18 -15 -18 -15 -18 -15 s12 (db) reverse isolation -35 -30 -35 -30 -30 -25 p -1db (dbm) 1db compressed output power 16 17 16 17 12 13.5 p sat (dbm) saturated output power 19 20 19 20 14 16.5 p out @16db (dbm) output power at 16db gain 17 18.5 17 18.5 nf (db) noise figure 2.5 5 5.5 rf det (mv/mw) rf detector sensitivity 0.5 0.5 0.5 0.04 - 30ghz broadband mmic low-noise amplifier application the UATM30M2C broadband mmic low-noise amplifier is designed for low-noise and broadband flat-gain applications in rf and microwave commu- nications, test equipment and military systems. by using specific external components, the bandwidth of operation can be extended below 40mhz. description the UATM30M2C is an eight stage traveling wave amplifier. the amplifier has been designed for low noise, flat gain, and good return loss to 30ghz. the amplifier typically has 2.5db nf and 18db gain from 6-20ghz, and 16db gain from 0.04-30ghz. features the UATM30M2C has >30db dynamic gain control, and includes a temperature-referenced power detec- tor output. device highlights low noise, ultra-flat gain 6-20ghz: 2.5db nf, 18 0.3db gain excellent 1.5-20ghz performance: very flat gain (18 0.6db) high p sat at 20ghz (20dbm) high p -1db at 20ghz (17dbm) wideband operation: 0.04-30ghz good input / output return loss high isolation >30db dynamic gain control integrated power detector 100% dc, rf, and visually tested size: 2390x920um (94.1x36.2mil)
centellax web: http://www .centellax.com/ email: sales@centellax.com tel: 866.522.6888 fax: 707.568.7647 UATM30M2C s21 0 5 10 15 20 0 5 10 15 20 25 30 frequency (ghz) s21 (db) 5v, 150ma 7v, 190ma typical ic performance measured on-wafer typical ic performance measured on-wafer UATM30M2C s11, s22 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 frequency (ghz) s11, s22 (db) 5v, 150ma s11 5v, 150ma s22 7v, 190ma s11 7v, 190ma s22 UATM30M2C output power 12 14 16 18 20 22 24 26 0 5 10 15 20 25 30 frequency (ghz) output power (dbm) 8v, 200ma psat 8v, 200ma p-1 7v, 190ma psat 7v, 190ma p-1 6v, 170ma psat 6v, 170ma p-1 5v, 150ma psat 5v, 150ma p-1 UATM30M2C s12 -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 frequency (ghz) s12 (db) 5v, 150ma 7v, 190ma UATM30M2C group delay 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 frequency (ghz) group delay (ps) 5v, 150ma 7v, 190ma typical measurement data is available upon request. email support@centellax.com for more information. UATM30M2C noise figure 0 1 2 3 4 5 6 0 5 10 15 20 25 30 frequency (ghz) nf (db) 5v, 150ma 7v, 190ma 4.3v, 90ma typical ic performance measured on-wafer typical ic performance measured on-wafer typical ic performance measured on-wafer typical ic performance with package de-embedded
centellax web: http://www .centellax.com/ email: sales@centellax.com tel: 866.522.6888 fax: 707.568.7647 dc bias the UATM30M2C is biased by apply- ing a positive voltage to the drain (vdd), then setting the drain current (idd) using a negative voltage on the gate (vg1). when zero volts is applied to the gate, the drain to source channel is open; this results in high idd. when vg1 is biased negatively, the channel is pinched off and idd decreases. the nominal bias is vdd=5.0v, idd=150ma. improved noise or power performance can be achieved with application-specific biasing. gain control dynamic gain control is available when operating the amplifier in the linear gain region. negative voltage applied to the second gate (vg2) reduces amplifier gain. rf power detection rf output power can be calcu- lated from the difference between the rf detector voltage and the dc detector voltage, minus a dc offset. please consult the power detector application note avail- able from the centellax webpage. low-frequency use the UATM30M2C has been designed so that the bandwidth can be extended to low frequen- cies. the low end corner fre- quency of the device is primarily determined by the external bias- ing and ac coupling circuitry. matching the amplifier incorporates on- chip termination resistors on the rf input and output. these resis- tors are rf grounded through on- chip capacitors, which are small and become open circuits at fre- quencies below 1ghz. a pair of gate and drain termina- tion bypass pads are provided for connecting external capacitors required for the low frequency extension network. these capac- itors should be 10x the value of the dc blocking capacitors. dc blocks the amplifier is dc coupled to the rf input and output pads; dc voltage on these pads must be isolated from external circuitry. for operation above 2ghz, a series dc-blocking capacitor with minimum value of 20pf is recom- mended; operation above 40mhz requires a minimum of 120pf. inductor bias dc bias applied to the drain (vdd) must be decoupled with an off- chip rf choke inductor. the amount of bias inductance will determine the low frequency operating point. inductive biasing can also be applied to the chip through the rf output. for many applications above 2ghz, a bondwire from the vdd pad will suffice as the biasing inductor. ensure the correct bond length as shown in the assembly diagrams. supplemental specifications parameter description min typ max vdd drain bias voltage 3v 5v 8v idd drain bias current ? 150ma 250ma vg1 1st gate bias voltage -4v ? 0v vg2 2nd gate bias voltage vdd-vg2<8v n/c +4v p in input power (cw) 20dbm p dc power dissipation 0.75w t ch channel temperature 150c ch thermal resistance (t case =85c) 18c/w
centellax web: http://www .centellax.com/ email: sales@centellax.com tel: 866.522.6888 fax: 707.568.7647 centellax UATM30M2C datasheet specifications subject to change without notice. copyright ? 2001-2004 centellax, inc. printed in usa. 10 aug 2004. applications support alternate assembly diagrams and other additional application support are available upon request. visit the centellax website for large printable assembly diagrams and application notes: http://www .centellax.com/product s/microwave/mmi cs/ua tm30m2c.shtml. pick-up and chip handling: this mmic has exposed air bridges on the top sur- face. do not pick up chip with vacuum on the die center ; handle from edges or with a custom collet. thermal heat sinking: to avoid damage and for optimum performance, you must observe the maximum channel tempera- ture and ensure adequate heat sinking. esd handling and bonding: this mmic is esd sensitive; preventive meas- ures should be taken during handling, die attach, and bonding. epoxy die attach is recommended . please visit our website for more handling, die attach and bond- ing information: http://www .centellax.com/. recommended components >20pf dc block: presidio sl1010x7r101m16vh >120pf dc block: presidio sl1010x7r181m16vh drain bias inductor: piconics cc21t36k240g5 byp ass cap acitors: drain: presidio sl5050x7r222m16vh gate: presidio sl3535x7r182m16vh chip size: 2390x920um (94.1x36.2mil) chip size tolerance: 5um (0.2mil) chip thickness: 100 10um (4 0.4mil) pad dimensions: 80x80um (3.1x3.1mil) die size, pad locations, and pad descriptions 2 - 30ghz bonding diagram 40mhz - 30ghz bonding diagram
|
